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| smd type diodes 1 silicon epitaxial schottky barrier type 1SS372 features small package low forward voltage : v f = 0.23v (typ.) @ i f =5ma electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i f = 1ma 0.18 i f = 5ma 0.23 0.30 i f = 100ma 0.35 0.50 reverse current i r v r = 10v 20 a total capacitance c t v r = 0, f = 1mhz 20 40 pf v forward voltage v f marking marking n9 1 anode 2 cathode 3 cathode / anod www.kexin.com.cn absolute maximum ratings ta = 25 parameter symbol rating unit maximum (peak) reverse voltage v rm 15 v reverse voltage v r 10 v average forward current i o 100 * ma maximum (peak) forward current i fm 200 * ma surge current (10ms) i fsm 1* a power dissipation p 100 mw junction temperature t j 125 storage temperature t stg -55to+125 operating temperature range topr -40 to 100 *unit rating .total rating= unit ratingx0.7
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